Determination of Barrier Height in Aluminium - Tellurium Schottky Diode

Student: Faith Sefunmi Agbonlahor (Project, 2025)
Department of Applied Physics
Ekiti State University, Ado-Ekiti, Ekiti State

Abstract

This project investigates the barrier height of an aluminium-tellurium Schottky diode, a crucial parameter influencing its electronic properties and performance in semiconductor applications. Schottky diodes, characterized by their metal- semiconductor junctions, exhibit rectifying behavior essential for applications in rectifiers, RF applications, and solar cells. The study employs current-voltage (I- V) measurements across varying temperatures to extract the barrier height, utilizing the thermionic emission model. By analyzing the data, we can derive the ideality factor and identify factors influencing the barrier height, such as temperature and interface states. Understanding these parameters provides insights into optimizing diode performance for electronic devices. This research contributes to the broader field of semiconductor physics, enhancing the design of advanced electronic components.

Keywords
determination barrier height aluminium tellurium schottky diode semiconductor applications devices physics components
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