Determination of Barrier Height in Aluminium - Tellurium Schottky Diode
Student: Faith Sefunmi Agbonlahor (Project, 2025)
Department of Applied Physics
Ekiti State University, Ado-Ekiti, Ekiti State
Abstract
This project investigates the barrier height of an aluminium-tellurium Schottky diode, a crucial parameter influencing its electronic properties and performance in semiconductor applications. Schottky diodes, characterized by their metal- semiconductor junctions, exhibit rectifying behavior essential for applications in rectifiers, RF applications, and solar cells. The study employs current-voltage (I- V) measurements across varying temperatures to extract the barrier height, utilizing the thermionic emission model. By analyzing the data, we can derive the ideality factor and identify factors influencing the barrier height, such as temperature and interface states. Understanding these parameters provides insights into optimizing diode performance for electronic devices. This research contributes to the broader field of semiconductor physics, enhancing the design of advanced electronic components.
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For the full publication, please contact the author directly at: agbonlahorfaith20@gmail.com
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Institutions
- Landmark University, Omu-Aran, Kwara State 1
- Lead City University, Ibadan, Oyo State 1
- Lens Polytechnic, offa, Kwara State. 215
- Madonna University, Elele, Rivers State 20
- Madonna University, Okija, Anambra State 2
- Mcpherson University, Seriki Sotayo, Ogun State 1
- Michael and Cecilia Ibru University, Owhrode, Delta State 1
- Michael Okpara University of Agriculture, Umudike 43
- Michael Otedola Col of Primary Educ. Epe, Lagos (affl To University of Ibadan) 8
- Modibbo Adama University, Yola, Adamawa State 15